Porous semiconductor dopant carriers

Details Porous semiconductor dopant carriers Porous semiconductor dopant carriers

C - Chemistry, Metallurgy

30

B

148/3, 261/6

C30B 31/00 (2006.01) C30B 31/16 (2006.01) H01L 21/22 (2006.01)

Patent

CA 1217784

POROUS SEMICONDUCTOR DOPANT CARRIERS ABSTRACT New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant carrier comprised of SiC, elemental silicon or mixtures thereof.

456081

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