Porous silicon nitride semiconductor dopant carriers

Details Porous silicon nitride semiconductor dopant carriers Porous silicon nitride semiconductor dopant carriers

H - Electricity

01

L

23/195

H01L 21/22 (2006.01) C30B 31/16 (2006.01)

Patent

CA 1245424

81008A/203(B) POROUS SILICON NITRIDE SEMICONDUCTOR DOPANT CARRIERS ABSTRACT New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopants, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant reaction sintered Si3N4 carrier material.

456084

Affiliated with

Also associated with

Rating

Porous silicon nitride semiconductor dopant carriers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Porous silicon nitride semiconductor dopant carriers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Porous silicon nitride semiconductor dopant carriers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1206000