H - Electricity – 01 – C
Patent
H - Electricity
01
C
356/174
H01C 1/14 (2006.01)
Patent
CA 1264871
ABSTRACT OF THE DISCLOSURE A positive ceramic semiconductor device having positive temperature coefficient of resistance comprises a pair of electrodes provided on a ceramic semiconductor substrate. One of the paired electrodes which is to serve as the positive pole is basically constituted by at least an electrically conductive layer of silver-palladium series containing silver and palladium at a predetermined ratio. For preventing a localized current concentration from occurring in the current conducting state, improvement is made as to the structure of the positive pole electrode formed of the electrically conductive material of silver- palladium series and/or the structure of the negative pole electrode. Silver-migration phenomenon on the positive ceramic semiconductor substrate as well as degradation of the mechanical strength thereof is positively prevented.
530415
Hori Makoto
Miwa Naoto
Niwa Hitoshi
Ogata Itsuhei
Fetherstonhaugh & Co.
Nippondenso Co. Ltd.
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