Positive index lateral waveguide semiconductor laser

Details Positive index lateral waveguide semiconductor laser Positive index lateral waveguide semiconductor laser

H - Electricity

01

S

345/32

H01S 5/223 (2006.01)

Patent

CA 1177150

RCA 76,328 POSITIVE INDEX LATERAL WAVEGUIDE SEMICONDUCTOR LASER ABSTRACT OF THE DISCLOSURE The invention is an improved semiconductor laser diode which includes a substrate having a pair of substantially parallel grooves in a major surface thereof with a land therebetween, a first confinement layer overlying the major surface of the substrate and the surfaces of the grooves; a guide layer overlying the first confinement layer, an active layer overlying the guide layer and the second confinement layer overlying the active layer. The improvement is a guide layer which tapers in increasing thickness from that portion of the layer over the land and whose surface, contacting the active layer, is concave in shape, and an active layer which is thickest over the land between the grooves and tapers in decreasing thickness in the lateral direction. This structure provides a positive lateral waveguide index for light propagating in the active and guide layers resulting in a reduced threshold current for lasing action and a reduced spon- taneous emission near threshold.

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