Positive photoresists with high resolution in the near uv

G - Physics – 03 – F

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G03F 7/023 (2006.01) G03F 7/022 (2006.01)

Patent

CA 1333854

Structures of high resolution in the near UV range and of high sharpness of edge and steepness of edge can be obtained by means of positive photoresists containing, in an organic solvent, in each case essentially at least (a) an alkali-soluble resin (b) a 1,2-naphthoquinone-diazide-5-sulfonyl ester of a trihydroxybenzene isomer (c) an aromatic hydroxy compound and also, if appropriate, further customary additives, and in which the result of component (b) is to give an absorption coefficient of at least 0.5 µm-1 for the photobleachable absorption, and component (c) is present in a concentration of 15-30 % by weight, relative to the total solids content.

594952

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