C - Chemistry – Metallurgy – 08 – F
Patent
C - Chemistry, Metallurgy
08
F
96/178, 402/513
C08F 220/18 (2006.01) C09D 133/10 (2006.01)
Patent
CA 1211600
Abstract of the Disclosure The invention provides a positive resist comprising a copolymer of 60 to 90 mo?% of phenylmethacrylate and 40 to 10 mo?% of methacrylic acid. The invention also provides a method for forming a pattern of a positive resist comprising the steps of: forming on a substrate a film of a positive resist which comprises a copolymer of 60 to 90% of phenyl- methacrylate and 40 to 10 mo?% of methacrylic acid; pre-baking said positive resist film to cross-link said copolymer; selectively radiating said positive resist film which has been pre-baked with a high energy beam to form a latent image; and developing said latent image with a developing solvent. Said positive resist has excellent resistance to dry etching and high sensitivity, and shows good adhesion to a substrate and can realize high resolution.
394565
Nippon Telegraph And Telephone Corporation
Ridout & Maybee Llp
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