Power detecting circuit and demodulator comprising the same

Details Power detecting circuit and demodulator comprising the same Power detecting circuit and demodulator comprising the same

H - Electricity

03

D

H03D 1/18 (2006.01)

Patent

CA 2380829

A power detecting circuit with high performance suitably fabricated in a monolithic cuicit, suitably operated in a wide high-frequency range, having a detection characteristic the linearity of which is excellent and which varies little with the bias variation and the FET threshold voltage variation, having a small DC offset, and producing a balanced output. The power detecting circuit has two transistors (FET) (Q101, Q102) connected with a resistor element (R103) as a current source at a connection point of the sources and having almost the same characteristics. Almost equal gate bias voltages are supplied to the gates by gate bias supplying circuits (102, 103), and almost equal drain bias voltage is supplied to the drains. Capacitors (C102, C103) having almost equal and sufficiently large capacitances are connected. A high frequency signal RFin is supplied to the gate of the transistor (Q101). The difference in voltage between the drains are used as a detection output. A demodulator comprising such a power detection circuit is also disclosed.

L'invention concerne un circuit de détection de puissance à haut rendement convenant à un circuit monolithique, destiné à fonctionner dans une large gamme de fréquences, ayant une caractéristique de détection dont la linéarité est remarquable et varie peu avec la variation de polarisation et la variation de tension de seuil du transistor à effet de champ, ayant un faible décalage en continu et produisant une sortie symétrique. Ledit circuit de détection de puissance comprend deux transistors à effet de champ (Q101, Q102) connectés sur un élément de résistance et présentant quasiment les mêmes caractéristiques. Des tensions de polarisation de grille presque égales sont appliquées sur les grilles par des circuits de polarisation des grilles (102, 103) et une tension de polarisation de drain presque égale est appliquée sur les drains. Des condensateurs (C102, C103) à capacités égales et suffisamment grandes sont connectés. Un signal HF entrant est transmis à la grille du transistor (Q101). La différence de tension entre les drains sert de sortie de détection. L'invention concerne également un démodulateur comprenant ledit circuit de détection de puissance.

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