H - Electricity
01
L
356/53
H01L 29/72 (2006.01) H01L 29/861 (2006.01)
Patent
CA 1078075
ABSTRACT OF THE DISCLOSURE The present invention concerns a power diode with a semiconductor body having an inner zone with a given thickness and a given specific resistance, and having on each side of said inner zone at least one outer zone which adjoins the inner zone and has a lower specific resistance in comparison with the inner zone. The diode is characterized in that the specific resistance and the thickness of the inner zone are so adapted to each other that UB<UPT, wherein UB is the avalanche voltage, and UPT is the voltage at which the space-charge zone includes the entire relatively lightly doped inner zone.
272516
Dannhauser Friedrich
Porst Alfred
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