H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/128, 356/74
H01L 29/76 (2006.01) H01L 29/78 (2006.01)
Patent
CA 1121516
ABSTRACT OF THE DISCLOSURE A planar high power Metal-Oxide-Semiconductor- Field-Effect-Transistor (MOSFET) including a substrate with an epitaxial layer on a surface thereof. A gate electrode including a strip of metal extending across a surface of the epitaxial layer and having a plurality of fingers extending therefrom along its length. The gate electrode being elec- trically insulated from the epitaxial layer by a layer of oxide. A source electrode on the surface of the epitaxial layer including fingers extending therefrom and interdigi- tating with the fingers of the gate electrode. There are p and n diffusion regions formed in the epitaxial layer except in an area under each of the gate fingers, which area re- mains undiffused. A drain electrode is connected to the surface of the substrate opposed to the surface upon which the epitaxial layer is deposited. During operation of the MOSFET as the blocking voltage across the translator increases and the transistor is in the OFF state, the horizontal components of fields from the adjacent and closely spaced p-regions cancel each other so that voltage breakdown due to junction curvature is avoided.
335410
Hanes Maurice H.
Schlegel Earl S.
Mcconnell And Fox
Westinghouse Electric Corporation
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