Power mos transistor structure

Details Power mos transistor structure Power mos transistor structure

H - Electricity

01

L

356/149

H01L 29/78 (2006.01) H01L 29/08 (2006.01)

Patent

CA 1280221

TITLE OF THE INVENTION A POWER MOS TRANSISTOR STRUCTURE ABSTRACT OF THE DISCLOSURE The invention relates to a structure of parallel power MOS transistors, each of which comprises on a same face of a substrate gate, source and drain contact zones and three levels of connection layers. The first level of connection layer (20) establishes a contact with all the gates and a connection between each gate and the adjacent gates. A second collection layer level establishes a con- tact with all the source regions (22) and drain regions (23) and a connection between each source (or drain) re- gion and the adjacent source (or drain) regions, aper- tures insulating each drain (or source) contact. A third continuous connection layer level (25) establishes a contact with all the drain (or source) regions of the second connection layer level.

569974

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