H - Electricity – 03 – K
Patent
H - Electricity
03
K
323/4
H03K 17/687 (2006.01) H03K 17/691 (2006.01)
Patent
CA 1311270
- 7 - POWER MOSFET GATE DRIVER CIRCUIT Abstract A MOSFET gate driver circuit reduces the noise susceptibility of a MOSFET switch by utilizing dual drive paths to apply turn-on and turn-off bias signals to the gate of the MOSFET. Drive pulses are coupled to the MOSFET switch via a pulse transformer which has two serially connected secondary windings. Turn on pulses are coupled by a diode from the first secondary to the MOSFET gate. Turn-off pulses are coupled via the second secondary to a control MOSFET which is turned on by a turn-off pulse and remains on in order to keep the gate of the MOSFET switch to a hold off voltage.
542056
American Telephone And Telegraph Company
Barzegar Farhad
Kirby Eades Gale Baker
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