Power mosfet integrated circuit

Details Power mosfet integrated circuit Power mosfet integrated circuit

H - Electricity

01

L

356/128, 356/75

H01L 29/76 (2006.01) H01L 29/417 (2006.01) H01L 29/423 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1188821

- 6 - POWER MOSFET INTEGRAIED CIRCUIT Abstract In power MOSFETS, lead resistance loss is an important device design consideration. These devices typically use, for gate electrodes, sheets of polysilicon in order to provide low input impedance. Likewise, the source electrodes are integrated together in a sheet-like structure. According to the invention, the sheet electrodes are perforated in a prescribed fashion to improve the high frequency performance of the device by reducing interelectrode capacitance.

433274

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