H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/06 (2006.01) H01L 29/32 (2006.01) H01L 29/74 (2006.01) H01L 29/861 (2006.01) H01L 29/87 (2006.01)
Patent
CA 2186796
The present invention relates to a power semiconductor device such as a diode and thyristor. In a semiconductor device such as a diode and thyristor having at least one pn junction between a pair of main surfaces, a first main electrode is formed on the surface of one of the main surfaces and a second main electrode is formed on the surface of the other one of the main surfaces. A semiconductor lattice defect is formed such that its lattice defect density increases gradually in the direction from the first main electrode to the second main electrode. Since the distribution of carrier density in the conduction state can be flattened according to the invention, the reverse recovery charge can be reduced substantially without causing the ON-state voltage to increase.
Ishikawa Katsumi
Katoh Shuji
Momma Naohiro
Saito Katsuaki
Sato Yutaka
Hitachi Ltd.
Kirby Eades Gale Baker
LandOfFree
Power semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1634685