Power semiconductor device with main current section and...

Details Power semiconductor device with main current section and... Power semiconductor device with main current section and...

H - Electricity

01

L

356/172

H01L 29/74 (2006.01) H01L 29/417 (2006.01) H01L 29/423 (2006.01) H01L 29/739 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1219382

RD-14,894 POWER SEMICONDUCTOR DEVICE WITH MAIN CURRENT SECTION AND EMULATION CURRENT SECTION Abstract of the Disclosure A power semiconductor device incorporates in its active, or current-carrying, region a main current section and an emulation current section. The active region is surrounded by a common device termination region. This is accomplished through provision of respective separate cathodes for the main and emulation current regions, while the device anode is common to both the main and emulation current sections. The current level in the emulation current section provides an accurate represen- tation of the current level in the main current section since the main and emulation current sections are closely coupled both thermally and electrically and, further, are formed in the same fabrication process. The current level in the main current section can be economically determined with low power circuitry by way of sensing the current level in the emulation current section.

461634

Affiliated with

Also associated with

Rating

Power semiconductor device with main current section and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor device with main current section and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device with main current section and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1277264