Power semiconductor device with mesa type structure

Details Power semiconductor device with mesa type structure Power semiconductor device with mesa type structure

H - Electricity

01

L

356/40

H01L 29/06 (2006.01) H01L 23/31 (2006.01) H01L 29/08 (2006.01) H01L 29/423 (2006.01) H01L 29/744 (2006.01)

Patent

CA 1226072

- 13 - Abstract of the Disclosure A mesa type power semiconductor device comprising a mesa groove disposed on the bottom thereof with separated gate electrodes leaving the central portion of the groove bottom free from a gate electrode. This construction is effective in preventing occurrence of an insulator breakdown between a cathode and a gate electrode.

470519

Affiliated with

Also associated with

Rating

Power semiconductor device with mesa type structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor device with mesa type structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device with mesa type structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1261620