Power semiconductor with buried grid structure

Details Power semiconductor with buried grid structure Power semiconductor with buried grid structure

H - Electricity

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L

356/173

H01L 29/80 (2006.01) H01L 21/265 (2006.01) H01L 21/266 (2006.01) H01L 21/74 (2006.01) H01L 29/06 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1226968

ABSTRACT A buried grid structure is produced in a semiconductor material particularly a silicon wafer, while using a metallic grid mask. The buried grid is formed directly within the semiconductor material by contradoping ion implantation by means of a high energy accelerator through the metallic grid mask. The bars or ribs of the metallic grid mask stop the ions passing there through so that two vertically separated and laterally offset buried grid structures are produced. By beveling the periphery of the wafer, buried conductive structures are formed at the same time as connections between the buried grid structures and a control electrode provided on the back side of the wafer.

473916

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