Power transistor

Details Power transistor Power transistor

H - Electricity

01

L

356/172, 356/71

H01L 29/72 (2006.01) H01L 29/08 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1091362

ABSTRACT A bipolar transistor includes an emitter zone having two regions of different doping levels. The more highly doped region is a surface-adjoining region located in the lower-doped region, extending only part- ally through the lower-doped region and laterally surrounding a central portion thereof. The transistor also includes a surface-adjoining base contact zone which surrounds the emitter zone and is laterally spaced apart from the more highly-doped region of the emitter zone. Additionally, a surface-adjoining conductive electrode is provided for contacting both the more highly-doped emitter region and the central portion of the less-highly doped region of the emitter zone. The configuration results in a transistor having improved reverse breakdown characteris- tics.

293395

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