Power transistor and method of manufacturing same

Details Power transistor and method of manufacturing same Power transistor and method of manufacturing same

H - Electricity

01

L

356/172, 356/71

H01L 29/72 (2006.01) H01L 21/28 (2006.01) H01L 29/08 (2006.01) H01L 29/10 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1091816

ABSTRACT: A multilayer power transistor includes an emitter zone having two layer of different diping levels, a less highly doped layer and a more highly doped sur- face region. The base zone of the transistor includes a central base region of higher doping level than that of the remainder of the base zone and which extends into the emitter surface region, This configuration results in a structure which exhibits a delocalization effect at any current level and improved secondary breakdown characteristics.

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