G - Physics – 03 – F
Patent
G - Physics
03
F
96/251
G03F 7/26 (2006.01) G03F 7/20 (2006.01)
Patent
CA 1285418
PRE-EXPOSURE METHOD FOR INCREASED SENSITIVITY IS HIGH CONTRAST RESIST DEVELOPMENT ABSTRACT OF THE INVENTION A high contrast developing process is described for use after pre-exposure to UV-visible radiation to produce increased sensitivity during lithographic pro- cessing of positive resist layers. Compared to samples which have not been subjected to the methods of this invention, sensitivity increases of a factor of 2-4 are to be expected. An additional benefit of low film loss from unexposed resist is obtained. The system disclosed is applicable to lithographic exposures utilizing electrons, photons (eg. UV-visible, x-rays, etc.) and atomic or molecular charged particles. Specifically, as a result of the increased sensitivity, higher throughput during lithographic processing for the fabrication of photomasks and semiconductor devices is realized.
514083
Chin Roland L.
Ferguson Susan A.
Lewis James M.
Owens Robert A.
Gowling Lafleur Henderson Llp
Microsi Inc.
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