Pre-fusion oxidized and wafer-bonded vertical cavity laser

Details Pre-fusion oxidized and wafer-bonded vertical cavity laser Pre-fusion oxidized and wafer-bonded vertical cavity laser

H - Electricity

01

S

H01S 5/183 (2006.01) H01S 5/42 (2006.01)

Patent

CA 2257672

It was proposed to combine two successful VCL technologies, wafer fusion and selective oxidation, in a new way to form a long wavelength VCL. The AI(ga)As oxidation is performed via fusion channels before the actual wafer fusion step. By doing so, the structure combines the advantages of two different, successful long wavelength VCL structures; the double fused and the single fused, oxygen implanted VCL.

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