Preferential etching of a piezoelectric material

C - Chemistry – Metallurgy – 30 – B

Patent

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148/3.2

C30B 33/02 (2006.01) C04B 41/53 (2006.01) C09K 13/08 (2006.01) C30B 33/04 (2006.01) H01L 21/306 (2006.01) H01L 41/22 (2006.01) H01L 41/24 (2006.01)

Patent

CA 1273275

Preferential Etching of a Piezoelectric Material Abstract of the Disclosure A method for preferentially etching a piezoelectric material is disclosed wherein a portion of the piezoelectric material is controllably subjected to a concentrated thermal energy source with a force sufficient to alter the crystalline orientation of the piezoelectric material. The piezoelectric material is then treated with a suitable echant for a controlled duration, wherein the portion of the piezoelectric material altered by the concentrated thermal energy source is etched at a different etching rate than the unaltered piezoelectric material, to preferentially etch a controlled anaglyphic planar configuration upon the piezoelectric material.

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