C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/38 (2006.01) C30B 23/02 (2006.01) C30B 25/02 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01)
Patent
CA 2411606
The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: at least a monocrystalline layer of a material having a thickness ranging between 100 and 300 nm, preferably between 200 and 250 nm, and whereof the crystal lattice parameter is less than the crystal lattice parameter of the gallium nitride or of the mixed gallium nitride with another metal, is inserted in the coating of gallium nitride or mixed gallium nitride with another metal. The invention also concerns the method for preparing said coating. The invention further concerns electronic and optoelectronic devices comprising said coating.
Couche monocristalline, sans craquelure, de nitrure de gallium ou de nitrure mixte de gallium et d'un autre métal, sur un substrat susceptible d'occasionner des contraintes extensives dans la couche, ledit substrat étant recouvert d'une couche tampon ; dans laquelle au moins une couche monocristalline d'un matériau dont l'épaisseur est de 100 à 300 nm, de préférence de 200 à 250 nm, et dont le paramètre de maille est inférieur au paramètre de maille du nitrure de gallium ou du nitrure mixte de gallium et d'un autre métal, est intercalée dans la couche de nitrure de gallium ou de nitrure mixte de gallium et d'un autre métal. Procédé de préparation de cette couche. Dispositifs électroniques et optoélectroniques comprenant cette couche.
Grandjean Nicolas Pierre
Massies Jean Claude
Semond Fabrice
Centre National de La Recherche Scientifique
Goudreau Gage Dubuc
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