Preparation of semiconductor substrates

H - Electricity – 01 – L

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H01L 21/20 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2193098

An indium phosphide semiconductor substrate (10) is prepared for subsequent growth of epitaxial layers (12 to 16) to form a semiconductor device (5). In the preparation, the substrate (10) is first annealed to promote any tendency for surface accumulation of impurity atoms by diffusion from the substrate and to promote impurity atom removal from the surface of the substrate. The substrate (10) is then surface etched to remove further impurities and to provide a clean, flat surface for subsequent epitaxial layer growth. The final stage of preparation involves growing a semi-insulating buffer layer (11) on the substrate to isolate the device epitaxial layers (12 to 16) from the substrate.

Substrat semi-conducteur en phosphure d'indium (10) préparé en vue d'une croissance ultérieure de couches épitaxiales (12 à 16) formant un dispositif à semi-conducteurs (5). Lors de la préparation de ce substrat, on procède d'abord au recuit du substrat (10) afin de favoriser toute tendance à l'accumulation superficielle d'atomes d'impureté par diffusion à partir du substrat, et de favoriser l'évacuation des atomes d'impureté à partir de la surface du substrat. Ensuite, on procède à la gravure de la surface du substrat (10) afin d'éliminer d'autres impuretés et d'obtenir une surface propre et plate permettant la croissance ultérieure de couches épitaxiales. L'ultime étape de préparation consiste à réaliser la croissance sur le substrat d'une couche intermédiaire semi-isolante (11) isolant du substrat les couches épitaxiales (12 à 16) du dispositif.

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