Pressure sensors and pressure transmitters

G - Physics – 01 – L

Patent

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Details

G01L 9/12 (2006.01) G01L 9/00 (2006.01) G05D 16/20 (2006.01)

Patent

CA 2212384

First capacitance pressure sensor (70A, B) has a fusion bonded single crystal structure (sapphire with cavity). Second one (70A, B) has an elongated and thick single crystal structure. Third one (70A, B) uses the electric field emanating from the back sides of the capacitor plates. First differential pressure transmitter uses a process barrier (71) and an elongated member as a sensor (70A, B). Second differential pressure transmitter uses single crystal structures with stress isolation members as sensors (70A, B). Basically thick slab cavity capacitance sapphire sensors are directly exposed to a process fluid. Slab: 15x3x2 cubic mm, cavity cross section: 1mm x 0.5 micro m, capacitance: 42 pF.

Un premier capteur de pression capacitif (70A, B) possède une structure à cristal unique assemblée par fusion (saphir à cavité). Un deuxième capteur (70A, B) possède une structure à cristal unique allongé et épais. Un troisième capteur (70A, B) utilise le champ électrique émanant des faces arrières des plaques du condensateur. Un premier transmetteur de pression différentielle utilise une barrière de traitement (71) et un élément allongé en tant que capteur (70A, B). Un second transmetteur de pression différentielle utilise des structures à cristal unique avec éléments d'isolation des contraintes en tant que capteurs (70A, B). Les capteurs saphir capacitifs à cavité et essentiellement en forme de barreau épais sont directement exposés à un fluide de traitement. Les dimensions du barreau sont de 15 x 3 x 2 mm, la section de sa cavité étant de 1 mm x 0,5 µm, et sa capacité de 42 pF.

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