Preventing lateral oxide growth by first forming nitride...

Details Preventing lateral oxide growth by first forming nitride... Preventing lateral oxide growth by first forming nitride...

H - Electricity

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356/178

H01L 21/76 (2006.01) H01L 21/3115 (2006.01) H01L 21/318 (2006.01) H01L 21/32 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1219967

ABSTRACT A limit is placed on the miniaturization of the field oxide structures in the manufacture of semiconductor layer arrangements due to the length of the thick oxide bird's beak. The diffusion of oxidizing agent is suppressed according to the invention by means of a thin diffusion barrier of silicon nitride which also produces no crystal faults in the desired temperature range. The natural oxide on the silicon wafers is also converted into a diffusion barrier as required by means of nitrogen implantation and/or special process management in the nitride deposition.

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