Prevention of low pressure chemical vapor deposition silicon...

Details Prevention of low pressure chemical vapor deposition silicon... Prevention of low pressure chemical vapor deposition silicon...

H - Electricity

01

L

148/2.1

H01L 21/365 (2006.01) C23C 16/40 (2006.01)

Patent

CA 1166129

PREVENTION OF LOW PRESSURE CHEMICAL VAPOR DEPOSITION SILICON DIOXIDE UNDERCUTTING AND FLAKING Abstract A chemical vapor deposition process wherein a silicon nitride, or the like, barrier layer of the order of 50 to 3000.ANG. is formed over a silicon substrate ar.d a low pressure chemical vapor deposition of a chloro- silane and a nitrous oxide oxidizing gas is used to form a silicon dioxide over the silicon nitride layer. This process overcomes the problem of the low pressure chemical vapor deposition of silicon dioxide that does not use the silicon nitride layer. The problem is degradation of the silicon dioxide layer during subsequent oxidation cycles. FI9-79-019

354064

Affiliated with

Also associated with

Rating

Prevention of low pressure chemical vapor deposition silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Prevention of low pressure chemical vapor deposition silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Prevention of low pressure chemical vapor deposition silicon... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-738742