H - Electricity – 01 – L
Patent
H - Electricity
01
L
148/2.1
H01L 21/365 (2006.01) C23C 16/40 (2006.01)
Patent
CA 1166129
PREVENTION OF LOW PRESSURE CHEMICAL VAPOR DEPOSITION SILICON DIOXIDE UNDERCUTTING AND FLAKING Abstract A chemical vapor deposition process wherein a silicon nitride, or the like, barrier layer of the order of 50 to 3000.ANG. is formed over a silicon substrate ar.d a low pressure chemical vapor deposition of a chloro- silane and a nitrous oxide oxidizing gas is used to form a silicon dioxide over the silicon nitride layer. This process overcomes the problem of the low pressure chemical vapor deposition of silicon dioxide that does not use the silicon nitride layer. The problem is degradation of the silicon dioxide layer during subsequent oxidation cycles. FI9-79-019
354064
International Business Machines Corporation
Rosen Arnold
LandOfFree
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