G - Physics – 01 – R
Patent
G - Physics
01
R
G01R 1/06 (2006.01) G01R 31/28 (2006.01)
Patent
CA 2248315
The probe (10) comprises a transistor (12) of which, in use, the collector and the emitter are connected to the fault insertion point (Pi) and to a reference signal level (M; ~Vcc), respectively. The fault insertion is carried out by bringing the transistor to saturation condition. The effects of the parasitic capacitive coupling between the collector and the base of the transistor (12) are eliminated by placing, between the base and the emitter, a capacitor (19) whose capacitance is substantially higher than said parasitic capacitance. Means (20) for monitoring the current absorbed in correspondence with the fault insertion point are also provided.
L'invention concerne une sonde (10) qui comporte un transistor (12) dont le collecteur et l'émetteur sont, en cours de fonctionnement, reliés respectivement à un point d'insertion de défaillance (Pi) et à un niveau de signal de référence (M; ±V¿cc?). On effectue l'insertion de défaillance en amenant le transistor à l'état de saturation. On supprime les effets de la capacité parasite couplant le collecteur à la base du transistor (12) en plaçant, entre la base et l'émetteur, un condensateur (19) dont la capacité est sensiblement supérieure à ladite capacité parasite. L'invention concerne également un organe (20) de contrôle du courant absorbé en correspondance avec le point d'insertion de défaillance.
Belforte Piero
Maggioni Flavio
Cselt - Centro Studi E. Laboratori Telecommunicazioni S.p.a.
Ridout & Maybee Llp
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