H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/116, 356/187
H01L 21/477 (2006.01) H01L 21/00 (2006.01) H01L 21/324 (2006.01)
Patent
CA 2015411
-23- Procedure and Apparatus for Rapid Thermal Annealing of Implanted Semiconductors Abstract This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a "black-box" comprising components of a black body material and subjecting the black box with the wafer therein to an RTA. In a preferred embodiment the RTA comprises (a) a pre-anneal step which includes heating to a temperature and for a period sufficient to preheat the wafer so as to reduce thermal shock due to a main annealing step, (b) the main annealing step being at a temperature and for a period sufficient to remove damage caused to said surface by the dopant implantation and to activate implanted dopant, and (c) a post-anneal step carried out at a temperature and for a period sufficient to relieve stresses which may result from the main-annealing step. The combined use of the RTA and the black box leads to wafers substantially free of slip lines and with reproducibly high - 24 - mobilities and uniform activation. (FIG. 1)
Grim Karen A.
Schwartz Bertram
Singh Shobha
Uitert Legrand G. Van
Zydzik George J.
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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