C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
C23F 1/16 (2006.01) C23F 1/24 (2006.01) H01L 21/00 (2006.01)
Patent
CA 2228168
The invention relates to a procedure applicable for drying substrate surfaces of a large number of materials, such as semiconductors, metals, plastics and, in particular, silicon. The silicon (1) is dipped into a liquid bath (2) and the silicon (1) is separated from the liquid (3), the liquid of the bath (2) consisting of an aqueous HF solution (3) with a concentration between .001 and 50 %. By adding a gas mixture containing O2/O3 immediately after the drying process is finished, the silicon surface is hydrophilized. By adding a gas mixture containing O2/O3 during the drying process, cleaning takes place as the ozone enters the solution on the liquid surface.
Une procédure permet de sécher des surfaces de substrats, composées d'un grand nombre de matériaux, tels que semi-conducteurs, métaux, plastiques et, en particulier, silicium. Le silicium (1) est plongé dans un bain (2) puis séparé du liquide (3) de ce bain (2) qui se compose d'une solution aqueuse d'acide fluorhydrique (3) présentant une concentration située entre 0,001 et 50 %. En ajoutant un mélange gazeux contenant O¿2?/O¿3? juste après la fin du processus de séchage, on rend la surface de silicium hydrophile. En ajoutant un mélange gazeux contenant O¿2?/O¿3? pendant ce processus de séchage, on produit un nettoyage quand l'ozone pénètre dans la solution à la surface du liquide.
Herrmannsdorfer Dieter
Schellenberger Wilhelm
Ictop Entwicklungs Gmbh
Macrae & Co.
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