C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/83, 204/96.3
C23C 16/18 (2006.01) C23C 16/56 (2006.01) H05K 3/14 (2006.01)
Patent
CA 1336249
The process for depositing an adherent silver film, especially on a nonconducting substrate, involves depositing the silver film from the gas phase. A plasma discharge in a gas containing volatile silver organic compounds is used. The silver compounds advantageously contain silver atoms which are bonded to an sp2-hybridized carbon atom and are halogen- containing, particularly fluorine-containing compounds. The compounds CF3-CAg=CF-CF3, CF3-CAg=CF2 and pentafluorophenyl silver may be used. The silver film so formed may be strengthened electrochemically or by chemical reduction. The silver film products are useful as electrically conducting, decorative or reflective layers.
608433
Oehr Christian
Suhr Harald
Atotech Deutschland Gmbh
Marks & Clerk
Oehr Christian
Suhr Harald
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