Process and an apparatus for producing silicon carbide...

Details Process and an apparatus for producing silicon carbide... Process and an apparatus for producing silicon carbide...

C - Chemistry, Metallurgy

01

B

23/389, 23/54, 2

C01B 31/36 (2006.01) C04B 35/36 (2006.01)

Patent

CA 1084235

Abstract of the Disclosure A process and an apparatus for producing silicon carbide consisting mainly of .beta.-type crystal are disclosed. The fine silicon carbide consisting mainly of .beta.-type crystal is produced by charging the starting material of silica and carbon with d mole ratio of C/SiO2 of 3.2-5.0 into a top portion of a vertical-type reaction vessel having a preheating zone, a heating zone and a cooling zone in this order, descending the starting material by gravity through the reaction vessel, heating the starting material in the heating zone at a temperature of 1,600- 2,100°C by electrically indirect heating in horizontal direction to effect the formation of SiC, cooling the resulting reaction product in the cooling zone under a non-oxidizing atmosphere, and recovering the cooled product from the bottom portion of the reaction vessel to obtain the desired product.

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