C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/40 (2006.01) C30B 7/00 (2006.01) C30B 7/10 (2006.01) C30B 9/00 (2006.01) C30B 29/38 (2006.01) H01S 5/028 (2006.01) H01S 5/323 (2006.01)
Patent
CA 2449714
The present invention refers to an ammonobasic method for preparing a gallium- containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
L'invention concerne un procédé ammonobasique permettant de préparer un cristal de nitrure contenant du gallium. Dans ce procédé, la charge contenant du gallium est cristallisée sur au moins un germe de cristallisation en présence d'un composant contenant un métal alcalin, dans un solvant azoté supercritique. Ce procédé permet de produire des cristaux de nitrure monocristallins de très haute qualité contenant du gallium.
Doradzinski Roman Marek
Dwilinski Robert Tomasz
Garczynski Jerzy
Kanbara Yasuo
Sierzputowski Leszek Piotr
Ammono Sp. Z. O.o.
Kirby Eades Gale Baker
Nichia Corporation
LandOfFree
Process and apparatus for obtaining bulk monocrystalline... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process and apparatus for obtaining bulk monocrystalline..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and apparatus for obtaining bulk monocrystalline... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1873082