C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/193, 23/389
C01B 33/18 (2006.01) B01J 12/00 (2006.01) C01B 7/19 (2006.01)
Patent
CA 1175637
ABSTRACT OF THE DISCLOSURE Process and apparatus are provided for preparing finely- divided silicon dioxide having high thickening capacity and good thixo- tropic properties by reaction of silicon fluoride in the vapor phase with water vapor, combustible gas and free oxygen-containing gas in a flame reaction zone to form silicon dioxide and hydrogen flouride while cooling the gaseous reaction mixture in that portion of the reaction zone adjacent the base of the flame by contact with a cooling surface maintained at a temperature below 500°C but above the dew point of the reaction waste gases generated in the flame reaction.
391730
Flemmert Gosta L.
Macrae & Co.
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