C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
C01B 33/027 (2006.01) B01J 19/24 (2006.01) C01B 33/029 (2006.01) C01B 33/03 (2006.01)
Patent
CA 2744872
Described is a process for preparing high-purity silicon by thermal decomposition of a silicon compound, wherein the silicon compound is decomposed by mixing it with a carrier gas which is at a temperature at which the silicon compound is thermally decomposed. Additionally described are a reactor and a plant in which such a process can be performed.
L'invention concerne un procédé de fabrication de silicium ultra-pur par décomposition thermique d'un composé de silicium, le composé de silicium étant mélangé à un gaz porteur ayant une température à laquelle le composé de silicium est décomposé thermiquement. L'invention concerne également un réacteur et un dispositif dans lesquels un tel procédé peut être réalisé.
Hahn Jochem
Petrik Adolf
Schmid Christian
Norton Rose Or S.e.n.c.r.l. S.r.l./llp
Schmid Silicon Technology Gmbh
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