C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/513 (2006.01) C23C 16/24 (2006.01) C30B 25/10 (2006.01)
Patent
CA 2442575
In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate (24) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location (12) where the source fluid is supplied and the substrate (24). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non- crystalline silicon atoms. The substrate (24) is exposed to both the source fluid and the auxiliary fluid.
La présente invention concerne un procédé et un dispositif permettant le dépôt d'une couche de silicium au moins partiellement cristalline, un plasma étant produit et un substrat (24) étant exposé, sous l'influence du plasma, à un liquide source contenant du silicium afin de permettre le dépôt du silicium qu'il contient. Une diminution de pression est réalisée entre un emplacement (12) où arrive le liquide source, et le substrat (24). De plus du liquide source, un liquide auxiliaire est également injecté, celui-ci étant capable d'attaquer les atomes de silicium non cristallins. Le substrat (24) est exposé à la fois au liquide source et au liquide auxiliaire.
Hamers Edward Aloys Gerard
Schram Daniel Cornelis
Smets Arno Hendrikus Marie
Van de Sanden Mauritius Cornelius Maria
Gowling Lafleur Henderson Llp
Technische Universiteit Eindhoven
LandOfFree
Process and device for the deposition of an at least... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process and device for the deposition of an at least..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process and device for the deposition of an at least... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1563382