Process and gas for removal of materials in plasma environment

Details Process and gas for removal of materials in plasma environment Process and gas for removal of materials in plasma environment

H - Electricity

05

H

148/3.2

H05H 1/24 (2006.01) C23F 4/00 (2006.01) G03F 7/42 (2006.01) H01L 21/3065 (2006.01) H01L 21/311 (2006.01) H05K 3/06 (2006.01)

Patent

CA 1117400

A-32565 TO ALL WHOM IT MAY CONCERN: BE IT KNOWN that we, Frank Scornavacca, a citizen of the United States, residing in the City of Emerson, County of Bergen, State of New Jersey, and Richard L. Bersin, a citizen of the United States, residing in the City of Castro Valley, County of Alameda, State of California, have invented certain new and useful improvements in a PROCESS AND GAS FOR TREATMENT OF SEMICONDUCTOR DEVICES of which the following is a specification. Abstract of the Disclosure Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF4 or SiF4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si3N4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.

315970

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