C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
148/27
C23F 1/12 (2006.01) C23F 1/14 (2006.01) H05K 3/02 (2006.01)
Patent
CA 1244324
ABSTRACT Process and structure for etching copper, as in the manufacture of printed circuit boards. The copper is exposed to a gaseous or liquid oxidant in the presence of a catalyst which promotes the reaction of copper with the oxidant. In some embodiments, the catalyst is carried by a medium which also serves as a receiver for oxidized copper species produced by the reaction, and in one preferred embodiment, the medium comprises a laminated structure having a first layer which contains a catalyst and a second layer which receives the oxidized copper species. The etching is substantially anisotropic, which alleviates the problem of undercutting.
443525
Psi Star
Smart & Biggar
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