Process and structure for thin film transistor matrix...

Details Process and structure for thin film transistor matrix... Process and structure for thin film transistor matrix...

H - Electricity

01

L

356/23, 375/39,

H01L 21/84 (2006.01) H01L 29/78 (2006.01) H01L 29/54 (1990.01) H01L 29/62 (1990.01)

Patent

CA 1307062

PROCESS AND STRUCTURE FOR THIN FILM TRANSISTOR MATRIX ADDRESSED LIQUID CRYSTAL DISPLAYS Abstract of the Disclosure A thin film FET switching element, particu- larly useful in liquid crystal displays, employs a set of special materials to ensure compatibility with the indium tin oxide of a pixel electrode layer used as transparent conductive material in liquid crystal display devices. These materials include the use of titanium as a gate electrode material and the use of aluminum as a material to enhance electrical contact between source and drain pads and an underlying layer of amorphous silicon. The apparatus and process of the present invention provide enhanced fabrication yield and device reliability.

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