Process and structure of an integrated vacuum...

Details Process and structure of an integrated vacuum... Process and structure of an integrated vacuum...

H - Electricity

01

J

H01J 9/12 (2006.01) H01J 1/30 (2006.01)

Patent

CA 2085981

The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.

Cette invention concerne globalement un nouveau dispositif microélectronique sous vide intégré (VMD) et un procédé de fabrication de ce dernier. Les dispositifs microélectroniques sous vide nécessitent plusieurs structures spécifiques tridimensionnelles: une extrémité pointue d'émission de champ, l'alignement précis de la pointe à l'intérieur d'une structure de grille de commande dans un environnement sous vide, et une anode pour recueillir les électrons émis par la pointe. L'invention concerne également une nouvelle structure et un procédé pour former des diodes, des triodes, des tétrodes, des pentodes et d'autres structures similaires. La structure finale fabriquée peut également être connectée à d'autres dispositifs VMD similaires ou à d'autres dispositifs électroniques.

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