Process for ashing organic materials from substrates

Details Process for ashing organic materials from substrates Process for ashing organic materials from substrates

Category

H - Electricity

Subcategory

01

Subsubcategory

L

IPC codes

H01L 21/302 (2006.01) C09K 13/00 (2006.01) G03F 7/42 (2006.01) H01L 21/311 (2006.01) H05K 3/26 (2006.01)

Type

Patent

Patent number

CA 2319018

Description

Ashing of an organic film from a substrate is carried out by providing a plasma comprising a gas or gas mixture selected from the following groups: (a) sulfur trioxide alone; (2) sulfur trioxide plus one supplemental gas; and (3) sulfur trioxide plus at least two supplemental gases. Any of the following gases may be employed as the supplemental gas: water vapor, ozone, hydrogen, nitrogen, nitrogen oxides, or a halogenide such as tetrafluoromethane, chlorine, nitrogen trifluoride, hexafluoroethane, or methyltrifluoride.

L'invention porte sur le brûlage de films organiques présents à la surface de substrats à l'aide d'un plasma d'un gaz ou d'un mélange de gaz choisi parmi: (a) du trioxyde de soufre seul, (b) du trioxyde de soufre plus un gaz additionnel, (c) du trioxyde de soufre plus au moins deux gaz additionnels. Chacun des gaz suivants peut servir de gaz additionnel: vapeur d'eau, ozone, hydrogène, azote, oxydes d'azote, ou un halogénure choisi parmi du tétrafluorométhane, du chlore, du trifluorure d'azote, de l'héxafluorométane ou du trifluorure de méthyle.

Affiliated with

Also associated with

Rating

Process for ashing organic materials from substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for ashing organic materials from substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for ashing organic materials from substrates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1848141