Process for controlled growth of carbon nanotubes

Details Process for controlled growth of carbon nanotubes Process for controlled growth of carbon nanotubes

C - Chemistry, Metallurgy

01

B

C01B 31/02 (2006.01) B32B 5/08 (2006.01) C23C 16/26 (2006.01) C30B 25/10 (2006.01)

Patent

CA 2331278

The process of the invention is capable of providing conformably- aligned nanotubes perpendicular to the local surface of a flat or non-flat substrate, with an average deviation less than 1.5°, while also allowing control over the nanotube diameter, length, and location. In particular, the invention uses a high frequency plasma enhanced chemical vapor deposition (PECVD), advantageously with an acetylene-ammonia chemistry, to provide such results, typically with cobalt as a catalyst metal.

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