C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 31/00 (2006.01) C30B 25/02 (2006.01) C30B 29/40 (2006.01) H01L 21/18 (2006.01) H01L 21/20 (2006.01)
Patent
CA 2139551
A process for crystal growth of III-V group compound semiconductor, which comprises pyrolyzing, in a gas phase, a material consisting of an organometallic compound and/or a hydride in the presence of an organic compound containing an oxygen atom-carbon atom direct bond, used as a dopant to grow a III-V group compound semiconductor crystal layer containing at least aluminum, of high electric resistance. Said process can grow a compound semiconductor layer of high electric resistance by the use of a dopant which enables the independent controls of oxygen concentration and aluminum concentration and which has a small effect of oxygen remaining.
Fukuhara Noboru
Hata Masahiko
Ishihara Toshio
Matsuda Yoshinobu
Marks & Clerk
Sumitomo Chemical Co. Ltd.
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