C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
26/112.1, 204/96
C23C 14/34 (2006.01) C04B 35/45 (2006.01) C23C 14/08 (2006.01) C23C 14/35 (2006.01) H01L 39/24 (2006.01)
Patent
CA 1331868
ABSTRACT OF THE DISCLOSURE A process for producing a superconducting thin film, in which a target made of a compound oxide containing Ba; one element M selected from the group consisting of Y, La, Gd, Ho, Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering power mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from the group consisting of Y, La, Gd, Ho, Er and Yb; and Cu, or of finally sintered material which is obtained by final sintering of preliminary sintered material at a temperature ranging from 700 to 1,500 °C. The physical vapor deposition is performed by high-frequency sputtering technique. The thin film obtained may be further heat-treated.
561423
Fujimori Naoji
Fujita Nobuhiko
Harada Keizo
Itozaki Hideo
Jodai Tetsuji
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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