Process for depositing a thin layer on a substrate using a...

Details Process for depositing a thin layer on a substrate using a... Process for depositing a thin layer on a substrate using a...

H - Electricity

01

L

H01L 21/31 (2006.01) C23C 16/40 (2006.01) C23C 16/513 (2006.01) H01L 21/312 (2006.01)

Patent

CA 2155659

A method for applying a thin film to a metal, organic or inorganic substrate (12), wherein a remote cold nitrogen plasma essentially consisting of free nitrogen atoms is produced in an enclosure (5) housing said substrate (12). To form passivation layers, a gaseous organosilica or germanium compound containing CH, Si (or Ge), O or NH groups is fed into said enclosure (5) during the formation of the remote nitrogen plasma. To form dielectric thin films, organometallic compounds may also be added.

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