Process for depositing high temperature superconducting...

Details Process for depositing high temperature superconducting... Process for depositing high temperature superconducting...

H - Electricity

01

L

H01L 39/24 (2006.01) B05D 5/12 (2006.01)

Patent

CA 2097839

An improved in-situ process is provided for depositing on a substrate a crystalline thin film of a compound requiring an elevated growth temperature, i.e., a growth temperature of about 100 °C to about 900 °C. The improvement comprises exposing the back surface of the substrate, i.e., the surface of the substrate opposite the surface on which the thin film is deposited, to radia- tion from a radiant heat source, thereby heating the substrate to the desired growth temperature, and maintaining the radiation and thereby the desired growth temperature during the deposition of the thin film.

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