Process for doping crystals of wide band gap semiconductors

Details Process for doping crystals of wide band gap semiconductors Process for doping crystals of wide band gap semiconductors

H - Electricity

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148/2.8

H01L 21/368 (2006.01) H01L 21/38 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1325582

ABSTRACT OF THE DISCLOSURE Non-equilibrium impurity incorporation is used to dope hard-to-dope crystals of wide band gap semicon- ductors, such as zinc selenide and zinc telluride. This involves incorporating into the crystal a compensating pair of primary and secondary dopants, thereby to increase the solubility of either dopant alone in the crystal. Thereafter, the secondary more mobile dopant is removed preferentially, leaving the primary dopant predominant. This technique is used to dope zinc selenide p-type by the use of nitrogen as the primary dopant and lithium as the secondary dopant. Alternatively, the technique may use nitrogen as the primary dopant and the hydrogen as the secondary dopant to obtain low resistivity p-type zinc selenide.

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