Process for epitaxially growing silicon thin layers

Details Process for epitaxially growing silicon thin layers Process for epitaxially growing silicon thin layers

C - Chemistry, Metallurgy

30

B

148/2.4, 148/2.8

C30B 7/00 (2006.01) H01L 21/00 (2006.01) H01L 21/265 (2006.01)

Patent

CA 1044577

Abstract Process for compensating for the presence of boundary charges in semiconductor layers which are grown on a monocrystalline insulating substrate including the stop of introducing doping atoms into the region of the boundary charges. The doping atoms can be introduced before any semiconductor has been deposit?? after a thin layer of the semiconductor has been epitaxially grown on the substrate, or after all of the epitaxial layer has been grown.

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