C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
356/149, 204/96.
C23C 14/12 (2006.01) C23C 16/50 (2006.01) C30B 33/12 (2006.01) H01L 21/3105 (2006.01) H01L 21/311 (2006.01) H01L 21/312 (2006.01) H01L 21/3213 (2006.01) H01L 21/336 (2006.01) H01L 29/45 (2006.01) H01L 29/786 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2005758
- 15 - DESCRIPTIVE ABSTRACT Process for the etching of a metal oxide coating and the simultaneous deposition of a polymer film and the application of this process to the production of a transistor. The process of the invention consists of subjecting a metal oxide coating (106, 108), located on a glass substrate (100), to the action of a gaseous plasma (109) containing 10 to 88% by volume of hydrogen, 2 to 30% by volume of a hydrocarbon and 10 to 50% of an inert vector gas, bringing about the formation of a polymer coating (110) on the parts of the substrate not provided with oxide, by dissocation of the gaseous mixture, and the partial chemical etching of the oxide (106, 108) by the formation of organometallic compounds.
Chouan Yannick
Favennec Jean-Luc
Chouan Yannick
Etat Francais Represente Par Le Ministre Des Postes Des Telecommunications Et de L'espace (centre National D'etudes
Favennec Jean-Luc
Goudreau Gage Dubuc
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