Process for fabricating a device

Details Process for fabricating a device Process for fabricating a device

G - Physics

03

F

G03F 7/26 (2006.01) G03F 7/004 (2006.01) G03F 7/039 (2006.01) G03F 7/09 (2006.01) H01L 21/312 (2006.01)

Patent

CA 2049795

-11- It has been found that surface reactions with basic materials such as amines found in the processing environment during lithographic processing contribute to a loss of linewidth control for resists such as chemically amplified resists, This loss in linewidth results from the reaction of the acid generated by exposing radiation with, for example, the amine resulting in a lack of chemical reaction where such reaction is desired. The problem is solved in one embodimentby employing an acid containing barrier layer on the resist.

Il s'avère que des réactions de surface avec des matériaux de base tels que des amines présents dans l'environnement de traitement retrouvé en lithographie contribuent à la perte de la définition de trait lors de l'utilisation de réserves, telles que des réserves chimiquement amplifiées. Cette perte de définition est attribuable à la formation d'acide, produite lors de l'exposition, par exemple, d'amines à de la radiation, de sorte qu'il y a absence de réaction chimique là où une telle réaction est requise. Dans une version, ce problème est résolu par l'application, sur la réserve, d'une couche barrière contenant de l'acide.

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