Process for fabricating complementary contactless vertical...

Details Process for fabricating complementary contactless vertical... Process for fabricating complementary contactless vertical...

H - Electricity

01

L

356/125, 356/178

H01L 29/73 (2006.01) H01L 21/331 (2006.01) H01L 21/8228 (2006.01) H01L 27/082 (2006.01)

Patent

CA 1290466

DOCKET 58.0064 ABSTRACT A complementary NPN and PNP contactless vertical transistor structure is formed by a process that includes the steps of providing: (1) a buried layer and P- tub for NPN; (2) a channel stopper for NPN, and a buried layer for PNP; (3) isolation oxide for NPN and PNP; (4) a sink for NPN, and a ground for PNP; (5) a base for NPN, and a sink for PNP; (6) a base for PNP; (7) a N+ poly implant for NPN emitter and PNP extrinsic base; (8) a P+ poly implant for NPN extrinsic base and PNP emitter; (9) poly definition; (10) silicide exclusion for resistors and diodes; (11) contacts; (12) first metal; (13) vias; (14) second metal; and (15) scratch protection.

573273

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